Communications Qualcomm to sample 20nm modem next year
2013/11/22
Cristiano Amon executive vice president Qualcomm
Qualcomm is to sample a 20nm chip early next year. The chip is an LTE Advanced modem called Gobi 9×35.
The modem performs carrier aggregation up to 40 MHz for both LTE TDD and FDD Category 6 with download speeds of up to 300 Mbps.
The carrier aggregation capability allows network operators to combine their fragmented spectrum in all possible 3GPP-approved combinations of 5 MHz, 10 MHz, 15 MHz, and 20 MHz bandwidths to increase capacity and service more subscribers with an improved end-user experience.
The modem is backward compatible with all other major cellular technologies, including DC-HSPA, EVDO Rev. B, CDMA 1x, GSM and TD-SCDMA.
The modem is accompanied by a 28nm transceiver carrier aggregation RF chip called WTR3925 that supports all carrier aggregation band combinations approved by 3GPP.
The WTR3925 pairs with the Gobi 9×35 chipset and the Qualcomm RF360 front end solution, which enable a global, single-SKU LTE platform.
“We’re excited to be expanding our portfolio with a fourth generation of 3G/LTE multimode connectivity solutions,” said Cristiano Amon, executive vice president, Qualcomm Technologies. “Not only do these products extend our industry-leading Gobi roadmap, they enable the creation of thinner and more efficient mobile devices capable of connecting to the fastest 4G LTE Advanced networks worldwide.”
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