Discretes Tiny p-mosfet switches loads in phones
2013/12/05
Only 0.4mm tall, Si8851EDB has an on resistance of 8.0mΩ with -4.5V on the gate, or 11.0mΩ at -2.5V.
The chip-scale ‘package’ has 30 balls in its array and “provides the lowest on-resistance possible for a given outline area”, claimed Vishay, saying that such a resistance was only possible in 3.3×3.3×0.8mm devices.
Use is expected load and battery switching in tablets, smartphones, and notebooks.
ESD protection is typically to 6kV, and the device is halogen-free according to JEDEC JS709A and RoHS Directive 2011/65/EU compliant.
The Si8851EDB is the latest expansion to Vishay’s Micro Foot family, and is an example of its Gen III chips.
Samples and production quantities are available now, with 12 to 16 weeks lead time for large orders.
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